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Al2O3-encapsulated top contact CdSe nanocrystal field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

thiocyanate-capped cadmium selenide nanocrystals

thiocyanate-capped cadmium selenide NC thiocyanate-capped CdSe nanocrystals thiocyanate-capped CdSe NC
Type
Formula
Role
5

indium

Type
Formula In
Role
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium oxide
  • Si/SiO2
Product

Al2O3-encapsulated top contact CdSe nanocrystal field-effect transistor

References

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