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(rGO/Ti0.87O20.52-)10 film-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

doped silicon

p++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

reduced graphene oxide/Ti0.87O20.52- nanosheet multilayer film

(rGO/Ti0.87O20.52-)10 film
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier concentration

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

(rGO/Ti0.87O20.52-)10 film-based field-effect transistor

References

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