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MSM back-to-back Schottky contact device based on nonpolar a-axial nonpolar GaN NW

Based on

1 Articles
2014 Most recent source

Composition

1

silica/silicon

Type Complex Compound
Formula
Role substrate
2

nonpolar a-axial GaN nanowires

GaN NW grown on patterned Si nonpolar a-axial GaN NW a-axial nonpolar GaN NW GaN NW
Type
Formula
Role
3

silver

Type Single Compound
Formula Ag
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on light density

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for UV light

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silica/silicon
  1. 9hhAoNrTpPHA
Product

MSM back-to-back Schottky contact device based on nonpolar a-axial nonpolar GaN NW

Size: not specified

Medium/Support: none

References

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