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PVI-based organic field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

quinoxaline-based N-heteroacene polymer film

PVI film
Type
Formula
Role
4

Ni/Au film

Type Nano Material
Formula
Role source
5

Ni/Au film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  1. xNRusz4Yk0VmqBjSrlIO
  2. C2I3MvhxEshinEmg
Product

PVI-based organic field-effect transistor

References

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