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field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxysilane moiety

trimethoxy(octadecyl)silane moiety N-octadecyltriethoxysilane moiety n-octadecyltriethoxysilane moiety octadecyltrimethoxysilane moiety octadecyltrichlorosilane moiety trichlorooctadecylsilane moiety n-octadecylsilanetrioxy group octadecylsilanetrioxy group octadecylsiloxane moiety n-octadecylsiloxy group octadecyl silane moiety octadecylsilane moiety hydrolyzed OTS moiety octadecylsiloxy group octadecyltrioxysilane octadecylsiloxy C18TMS moiety ODTMS moiety OTMOS moiety ODTS moiety OTES moiety OTMS moiety OTS moiety OTS unit ODTS
Type
Formula -C18H37O3Si-
Role
4

diketopyrrolopyrrole-selenophene vinylene selenophene-based polymer

DPP-SVS
Type
Formula
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • Si/SiO2
  1. G7ZYeKdNatCbfpb3J
Product

field-effect transistor

Size: not specified

Medium/Support: none

References

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