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In0.51Ga0.49N/GaN disk-in-nanowire laser heterostructures

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role contacts
3

n-In0.18Al0.82N nanowires

Type Nano Material
Formula
Role cladding layer
4

indium gallium nitride

Type Single Compound
Formula In0.06Ga0.94N
Role waveguide layer
5

In0.51Ga0.49N/GaN layer

Type Nano Material
Formula
Role QD layer
6

p-Al0.15Ga0.85N

Type Complex Compound
Formula
Role hole transport layer
7

indium gallium nitride

Type Single Compound
Formula In0.06Ga0.94N
Role waveguide layer
8

p-In0.18Al0.82N nanowires

Type Nano Material
Formula
Role cladding layer
9

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role contacts

Properties

General physical and chemical properties

Property Value Source
optical output

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Applications

Area Application Source
lasers

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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