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dual-gated MoS2/WSe2 heterostructure tunnel diode

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

nickel

Type Single Compound
Formula Ni
Role bottom gate
4

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
5

nickel

Type Single Compound
Formula Ni
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain
7

molybdenum sulfide thin film

molybdenum disulfide bilayer multiple-layered MoS2 film 2-layer MoS2 thin film bilayer MoS2 MoS2 bilayer MoS2 film
Type
Formula
Role
8

bilayer WSe2

WSe2 film BL-WSe2
Type
Formula
Role
9

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
10

nickel

Type Single Compound
Formula Ni
Role upper gate

Properties

General physical and chemical properties

Property Value Source
current density dependent on temperature

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • nickel
  • Si/SiO2
Product

dual-gated MoS2/WSe2 heterostructure tunnel diode

References

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