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graphene nanomesh-based FET device integrated with quantum dots

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate dielectrics
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulators
3

Ti/Au electrode material

Type Complex Compound
Formula
Role drain
4

Ti/Au electrode material

Type Complex Compound
Formula
Role source
5

graphene nanoribbon network

graphene nanomesh GNM
Type Nano Material
Formula
Role channels
6

CdSe QD capped with polyaniline

CdSe QD capped with PANI QD(PANI) QD@PANI
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

graphene nanomesh-based FET device integrated with quantum dots

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

graphene nanomesh-based FET device integrated with quantum dots

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

graphene nanomesh-based FET device integrated with quantum dots

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

graphene nanomesh-based FET device integrated with quantum dots

Size: not specified

Medium/Support: none

References

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