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tantalum oxide-based resistive random access memory

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type
Formula
Role
2

silicon oxide

SiOy
Type Complex Compound
Formula
Role interface layer
3

tantalum oxide

TaOx
Type
Formula
Role
4

platinum

Type Single Compound
Formula Pt
Role top electrode
5

Pt/Ti

Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
activation energy

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Applications

Area Application Source
data storage

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon
  • tantalum pentoxide
  1. A9yiwXfrqZkHanxX
Product

tantalum oxide-based resistive random access memory

References

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