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back-gate molybdenum disulfide field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum disulfide nanosheets

MoS2 nanosheets MoS2 flakes
Type Nano Material
Formula
Role channels
4

gold/titanium film

Ti/Au film Au/Ti film
Type Nano Material
Formula
Role source
5

gold/titanium film

Ti/Au film Au/Ti film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on preparation conditions

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

back-gate molybdenum disulfide field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

back-gate molybdenum disulfide field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

back-gate molybdenum disulfide field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

back-gate molybdenum disulfide field-effect transistor

References

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