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hexaethynylbenzene-derived carbon film-based field-effect transistor

Based on

2 Articles
2017 Most recent source

Composition

1

p-type silicon

P+-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene film

Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. NXOHG323t1XDsulV7TX3g75w
  2. zjKf
Product

hexaethynylbenzene-derived carbon film-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

hexaethynylbenzene-derived carbon film-based field-effect transistor

References

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