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manganite-based resistive random access memory cell

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

titanium

Type Single Compound
Formula Ti
Role substrate
4

platinum

Type Single Compound
Formula Pt
Role substrate
5

praseodymium calcium manganese oxide

PCMO
Type
Formula Pr0.7Ca0.3MnO3
Role
6

CMO

Type
Formula CaMnO(x)
Role
7

praseodymium calcium manganese oxide

PCMO
Type
Formula Pr0.7Ca0.3MnO3
Role
8

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes
9

gold

Type Single Compound
Formula Au
Role protective layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on resistance state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • praseodymium calcium manganese oxide
  • Pt/Ti/SiO2/Si
  1. jaaw6rd7lY5PpHx4YO8VnZnBBmi
Product

manganite-based resistive random access memory cell

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • praseodymium calcium manganese oxide
  • Pt/Ti/SiO2/Si
  1. VB1WAIWgABcsXbpdmjUBirEcMeE
Product

manganite-based resistive random access memory cell

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • praseodymium calcium manganese oxide
  • Pt/Ti/SiO2/Si
  1. YUSTqLXm6X3Z5cjd8ZTcUwmybSI
Product

manganite-based resistive random access memory cell

Size: not specified

Medium/Support: none

References

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