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back-gate n-type InGaZnO channel field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

molybdenum

Type Single Compound
Formula Mo
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium/gallium-doped zinc oxide

IGZO
Type Complex Compound
Formula
Role channels
4

Ti/Au film

Type Complex Compound
Formula
Role source
5

Ti/Au film

Type Complex Compound
Formula
Role drain
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role passivation layer

Properties

General physical and chemical properties

Property Value Source
drain current dependent on preparation conditions

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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