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graphene-based floating gate transistor memory device

Based on

1 Articles
2014 Most recent source

Composition

1

polyethylene naphthalate

PEN
Type Polymer
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate electrode
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role blocking dielectric
4

crosslinked poly(4-vinylphenol)

cPVP
Type Polymer
Formula
Role tunneling dielectric
5

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source

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Applications

Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polyethylene naphthalate
  • aluminium oxide
  • tin-doped indium oxide
Product

graphene-based floating gate transistor memory device

References

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