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few-layer SnS2 FET

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

layered metal dichalcogenide semiconductor material

SnS2 flake
Type Nano Material
Formula
Role channel layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
field-effect carrier mobility

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Applications

Area Application Source
diagnostics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

Method 2

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

Method 3

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

Method 4

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

Method 5

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

References

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