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tungsten(IV) sulfide n-type field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

WS2 film

Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source

Properties

General physical and chemical properties

Property Value Source
drain-source current

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • WS2 film
  • n-doped silicon
Product

tungsten(IV) sulfide n-type field effect transistor

References

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