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top-gate molybdenum disulfide field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

molybdenum disulfide nanosheets

MoS2 nanosheets MoS2 flakes
Type Nano Material
Formula
Role channels
4

Ti/Au film

Type Complex Compound
Formula
Role source
5

Ti/Au film

Type Complex Compound
Formula
Role drain
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

top-gate molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

top-gate molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

top-gate molybdenum disulfide field-effect transistor

Size: not specified

Medium/Support: none

References

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