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graphene field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back-gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

palladium

Type Single Compound
Formula Pd
Role drain
5

gold

Type Single Compound
Formula Au
Role drain
6

palladium

Type Single Compound
Formula Pd
Role source
7

gold

Type Single Compound
Formula Au
Role source
8

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role top gate dielectric
9

titanium

Type Single Compound
Formula Ti
Role upper gate
10

gold

Type Single Compound
Formula Au
Role upper gate
11

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
carrier density in channel dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. 07CLrilezUjZoXPduj0Jzjrn1
Product

graphene field-effect transistor

Method 2

Type: Physical formation
Source:
  1. 3M5SX4Ix4Ez2yAuIh7k53UwGl
Product

graphene field-effect transistor

Method 3

Type: Physical formation
Source:
  1. hmbayE1uA4zOMdz6PxDMiDiZG
Product

graphene field-effect transistor

Method 4

Type: Physical formation
Source:
  1. dH59Am96IE0XqcfUq1YT7FiaN
Product

graphene field-effect transistor

Method 5

Type: Physical formation
Source:
  1. 2zV2XsHKqNmZERKjcsE13nr42
Product

graphene field-effect transistor

References

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