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MoS2-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

titanium

Type Single Compound
Formula Ti
Role bottom gate
4

lead zirconate titanate

lead zirconium titanate lead-zirconate-titanate Lead zirconate titanate PZT 52/48 PZT
Type Single Compound
Formula Pb(Zr0.52Ti0.48)O3
Role gate dielectrics
5

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role semiconductor layer
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
capacitance per area

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. o7ryN470qNim638TQgNLkgSPlSvb6Wy
Product

MoS2-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. r0q3DyQHdRnE5mCVpZejeC4Y0OoIh47
Product

MoS2-based field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. 3l8lNWayg1CPGolCMOGtbJWtZeJn4jR
Product

MoS2-based field-effect transistor

References

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