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gallium(II) telluride nanosheet-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gallium(II) telluride nanosheets

Type Nano Material
Formula
Role semiconductor layer
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. ceE0tVBQNmM8
Product

gallium(II) telluride nanosheet-based field-effect transistor

Size: not specified

Medium/Support: none

References

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