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silicon nanowire field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

silicon nanowire

Si nanowire Si NW
Type Nano Material
Formula
Role channels
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

hafnium silicon oxynitride/titanium nitride/polysilicon trilayer

HfSiON/TiN/poly-Si trilayer
Type Nano Material
Formula
Role gate
5

arsenic-doped silicon

As-doped Si
Type Complex Compound
Formula
Role source
6

arsenic-doped silicon

As-doped Si
Type Complex Compound
Formula
Role drain
7

silicon nitride/silicon dioxide/silicon nitride trilayer

Si3N4/SiO2/Si3N4 trilayer
Type Nano Material
Formula
Role spacer
8

nickel platinum silicide

Type Single Compound
Formula NiPtSi
Role contacts

Properties

General physical and chemical properties

Property Value Source
conductance

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Applications

Area Application Source
electronics

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Characterization

Method Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. xrem2eBdUlgAN5GUbMT3Ytiy
Product

silicon nanowire field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. J9H1EzNfQKrGzIycddXICV2x
Product

silicon nanowire field-effect transistor

References

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