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intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multiwalled carbon nanotube

MWCNT
Type Nano Material
Formula
Role conducting channel
4

palladium

Type Single Compound
Formula Pd
Role source
5

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
charge noise parameter

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. hYBPKeb6Rgox1Qo0DlmkSn6ChAM
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. rUyc03JVX49CWq3A1A7LMHzwUDY
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Method 3

Type: Physical formation
Source:
Starting materials
  1. EbApJZpCk7gatDO4c1KH0dMxWDw
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Method 4

Type: Physical formation
Source:
Starting materials
  1. a8oxTK3imJRvCCQQOXzKeOR5QbI
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

References

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