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back-gated graphene field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Bernal stacked bilayer graphene

artificially stacked graphene two-layer stacked graphene stacked bilayer graphene two-layer graphene stack double layer graphene double-layer graphene 2L stacked graphene graphene electrode two layer graphene bi-layer graphene 2L graphene stack bilayer graphene graphene AB-BLG 2-LG BLG
Type
Formula
Role
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gated graphene field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

back-gated graphene field effect transistor

Size: not specified

Medium/Support: none

References

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