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ultrathin In2O3 film FET

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role source
4

Ti/Au electrode material

titanium/gold thin film titanium-gold layer titanium/gold film gold/titanium film Ti/Au thin film titanium/gold Au/Ti bilayer Ti/Au film Au/Ti film Ti/Au
Type Nano Material
Formula
Role drain
5

indium oxide thin film

In2O3 ultrathin film
Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

ultrathin In2O3 film FET

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

ultrathin In2O3 film FET

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

ultrathin In2O3 film FET

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

ultrathin In2O3 film FET

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • air
  • heavily doped silicon
Product

ultrathin In2O3 film FET

Size: not specified

Medium/Support: none

References

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