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InAs Nanowire Transistors

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
4

mixture of substance based on (nickel/nickel/gold/gold)

Type Complex Compound
Formula
Role drain
5

mixture of substance based on (nickel/nickel/gold/gold)

Type Complex Compound
Formula
Role source
6

mixture of substance based on (nickel/nickel/gold/gold)

Type Complex Compound
Formula
Role wrap-gate layer
7

gold

Type Single Compound
Formula Au
Role wrap-gate layer
8

tungsten

Type Single Compound
Formula W
Role wrap-gate layer
9

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role wrap-gate layer
10

InAs nanowires

Type Nano Material
Formula
Role active layer

Properties

General physical and chemical properties

Property Value Source
drain current dependent on back-gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
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Product

InAs Nanowire Transistors

References

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