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n-channel metal-oxide-semiconductor field-effect transistors

Based on

1 Articles
2015 Most recent source

Composition

1

polyoctanediol citrate

POC
Type Polymer
Formula
Role substrate
2

phosphorus-doped Si

Type
Formula
Role
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate and interlayer dielectrics
4

magnesium

Type Single Compound
Formula Mg
Role source, drain, gate electrodes

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
  • phosphorus
  1. VQUp2BK
Product

n-channel metal-oxide-semiconductor field-effect transistors

References

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