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dual-gate carbon nanotube field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

single-walled carbon nanotube

SWCNT CNT
Type Nano Material
Formula
Role suspended channel
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain
7

palladium

Type Single Compound
Formula Pd
Role lateral gate

Properties

General physical and chemical properties

Property Value Source
background noise floor

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Sensor properties

Type of sensor Sensor property Source
electricity sensor for electric current in circuit

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. QBtbK
  2. aHlYaCyQd51CzYDphJOBeLDHb8Fba5g3cGDl
  3. KFnckbCXdC
Product

dual-gate carbon nanotube field-effect transistor

Method 2

Type: Physical formation
Source:
  1. hxL58
  2. tGH1nNUURGFu4WX6nMkd5OfXAKzHrfS5OWs1
  3. H0ZFtPclgW
Product

dual-gate carbon nanotube field-effect transistor

Method 3

Type: Physical formation
Source:
  1. W7yAa
  2. wkVWR1MMHYW585LZGSWtJBMds2hEnIEndbZ4
  3. SnkiRrkPNL
Product

dual-gate carbon nanotube field-effect transistor

References

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