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dual-gate carbon nanotube field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

single-walled carbon nanotube

SWCNT CNT
Type Nano Material
Formula
Role suspended channel
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain
7

palladium

Type Single Compound
Formula Pd
Role lateral gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
background noise floor

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
electricity sensor for electric current in circuit

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. 0rEys
  2. gtHRjCbyx1NzpMna40oN5UmxlQ4OmktLGwLK
  3. nALKbZQAsX
Product

dual-gate carbon nanotube field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
  1. BkWjJ
  2. XdhGbc8TA3QMAgESV1lP371mNZG3Vx6j8jzy
  3. Vx4QTdhseD
Product

dual-gate carbon nanotube field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
  1. 6wSq2
  2. jrEkr4GB0pjVyUS1j7yBwsOYKBCd6MoHNrL2
  3. Wgwn6a96FU
Product

dual-gate carbon nanotube field-effect transistor

Size: not specified

Medium/Support: none

References

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