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boron nitride-encapsulated ultrathin black phosphorus-based field-effect transistors

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role back gate
2

few-layer black phosphorus

few-layer BP phopshorene
Type
Formula
Role
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role electrodes
4

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role upper gate
5

chromium/gold

Cr/Au
Type Nano Material
Formula
Role source
6

chromium/gold

Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
source-drain current dependent on displacement fields

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. JPF7AYlZXII
Product

boron nitride-encapsulated ultrathin black phosphorus-based field-effect transistors

References

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