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dual-gated topological insulator thin-film device

Based on

1 Articles
2015 Most recent source

Composition

1

(Bi1-xSbx)2Te3 thin film

BST thin film
Type Nano Material
Formula
Role active layer on substrate
2

titanium

Type Single Compound
Formula Ti
Role metal contact
3

gold

Type Single Compound
Formula Au
Role metal contact
4

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role dielectric layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Hall resistivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. PGHJY0c3IV9gOAhwQlwB18EOQXoctHFw7Vkm4vi3JWZsdUwimIne6o5diW5ZoSIt
Product

dual-gated topological insulator thin-film device

Size: not specified

Medium/Support: none

References

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