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gallium arsenide array-based high electron mobility transistor

Based on

1 Articles
2015 Most recent source

Composition

1

semi-insulating GaAs

SI GaAs
Type Single Compound
Formula GaAs
Role substrate
2

example of electrically conductive nanowires

gallium arsenide nanowires example of nanowires GaAs nanowires GaAs NW
Type Nano Material
Formula
Role channel layer
3

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type
Formula Al0.33Ga0.67As
Role
4

silicon-doped aluminium gallium arsenide

Si-doped Al0.33Ga0.67As
Type Complex Compound
Formula
Role barrier layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role Ohmic contacts
6

Ti/Pt/Au

Type Complex Compound
Formula
Role gate
7

Ti/Au

Type Complex Compound
Formula
Role drain
8

Ti/Au

Type Complex Compound
Formula
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
See all (4)
  1. EpO20p
  2. uokpsRlaMVMcS
Product

gallium arsenide array-based high electron mobility transistor

Size: not specified

Medium/Support: none

References

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