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3-aminopropyltriethoxysilane functionalized p-type silicon nanowire field effect transistor

Based on

1 Patents
2015 Most recent source

Composition

1

3-aminopropyltriethoxysilane-modified silicon nanowires

APTES-modified SiNW
Type Nano Material
Formula
Role channels
2

Ti/Pd (5/60 nm)

Type Nano Material
Formula
Role source
3

Ti/Pd (5/60 nm)

Type Nano Material
Formula
Role drain
4

silicon nitride

Type Single Compound
Formula Si3N4
Role insulating layer
5

SU-8 3050 photoresist

Type Complex Compound
Formula
Role coatings

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance dependent on trinitrotoluene concentration

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX) in air

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. z52Np01Jouq8SvYZeTss
Product

3-aminopropyltriethoxysilane functionalized p-type silicon nanowire field effect transistor

Size: not specified

Medium/Support: none

References

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