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InAs/GaSb superlattice-based photodetector

Based on

1 Articles
2014 Most recent source

Composition

1

type-II InAs/GaSb-based superlattice

InAs/InSb/GaSb-based structure T2SLs
Type
Formula
Role
2

n-doped indium(III) arsenide

n-doped indium monoarsenide n-doped indium arsenide n-doped InAs
Type Complex Compound
Formula
Role capping layer
3

p-doped GaSb

Type Complex Compound
Formula
Role contacting layer
4

titanium

Type Single Compound
Formula Ti
Role Ohmic contacts
5

platinum

Type Single Compound
Formula Pt
Role Ohmic contacts
6

gold

Type Single Compound
Formula Au
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dark current

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. DqDsdMphgq8Zyeegp1XFmuuaDLXGXJ
Product

InAs/GaSb superlattice-based photodetector

Size: not specified

Medium/Support: none

References

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