Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

bottom-gate organic field effect transistor

Based on

1 Patents
2012 Most recent source

Composition

1

source/drain electrode

Type
Formula
Role
2

gate/dielectric layer

Type
Formula
Role
3

semiconducting layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • highly doped silicon
Product

bottom-gate organic field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial