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top-gated graphene transistor with n-doped GAN nanowire gate

Based on

1 Patents
2012 Most recent source

Composition

1

gallium nitride nanowires

Type
Formula
Role
2

chemically converted graphene

graphene nanoribbon junction single-layer graphene film ion-irradiated graphene monolayer graphene film single-layer graphene single layer graphene freestanding graphene top - gated graphene monolayer graphene graphene film ML graphene graphene SLG CCG FSG GN G
Type
Formula
Role
3

300 nm thick silica layer

300 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film SO2 layer
Type
Formula
Role
4

platinum film

Pt film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance

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Applications

Area Application Nanomaterial Variant Source
engineering

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

top-gated graphene transistor with n-doped GAN nanowire gate

Size: not specified

Medium/Support: none

References

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