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TiO2-x-based resistive memory device

Based on

1 Articles
2014 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

gold

Type Single Compound
Formula Au
Role electrodes
4

oxygen deficient titanium(IV) oxide

substoichiometric titanium oxide oxygen deficient titanium oxide oxygen-deficient titanium oxide substoichiometric titanate oxygen-deficient titania oxygen vacancy titania reduced titanium oxide oxygen-rich titania titanium sub-oxide oxidized titanium titanium suboxide titanium oxide titanate titania
Type Single Compound
Formula TiO(x)
Role dielectric layer
5

titanium/gold bilayer

titanium/gold film Ti/Au film
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • oxygen
Product

TiO2-x-based resistive memory device

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • oxygen
Product

TiO2-x-based resistive memory device

References

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