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InGaN LED with FIB-drilled disk pattern

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

unintentionally doped gallium nitride

Type
Formula
Role
4

n+-type silicon-doped gallium nitride

n+-GaN:Si
Type
Formula
Role
5

nanoporous silicon-doped gallium nitride

nanoporous GaN:Si
Type
Formula
Role
6

light-doped silicon-doped gallium nitride

light-doped GaN:Si
Type
Formula
Role
7

indium gallium nitride/gallium nitride multiple quantum well

InGaN/GaN MQW
Type Nano Material
Formula
Role active layer
8

magnesium-doped gallium nitride

GaN:Mg
Type
Formula
Role
9

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent electrodes

Properties

General physical and chemical properties

Property Value Source
emission intensity distribution dependent on bridge width

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

References

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