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AlGaInP-based light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

AuGe/Au

Type Complex Compound
Formula
Role n-type electrode
2

silicon-doped gallium arsenide

Si-doped GaAs GaAs:Si
Type Complex Compound
Formula
Role substrate
3

n-GaAs/AlAs bilayer

Type Complex Compound
Formula
Role distributed Bragg reflector
4

silicon-doped aluminium gallium indium phosphide

AlGaInP:Si
Type
Formula
Role
5

aluminium gallium indium phosphide multiple quantum well

AlGaInP MWQ
Type Nano Material
Formula
Role active region
6

magnesium-doped aluminium gallium indium phosphide

AlGaInP:Mg
Type
Formula
Role
7

magnesium-doped gallium phosphide

Mg-doped GaP GaP:Mg
Type Complex Compound
Formula
Role window layers
8

AuBe/Au

Type Complex Compound
Formula
Role p-type electrode

Properties

General physical and chemical properties

Property Value Source
power

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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