Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Pt/AlGaN/GaN heterostructure field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

aluminium gallium nitride

Type Single Compound
Formula Al0.24Ga0.76N
Role barrier
4

n+ -Al0.24Ga0.76N

Type
Formula
Role
5

platinum

Type Single Compound
Formula Pt
Role gate
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

aluminium

aluminum
Type
Formula Al
Role
8

titanium

Type
Formula Ti
Role
9

gold

Type Single Compound
Formula Au
Role drain
10

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. fKJoQa4
Product

Pt/AlGaN/GaN heterostructure field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial