Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

gate-recessed AlGaN/GaN ion-sensitive field-effect-transistor

Based on

1 Articles
2015 Most recent source

Composition

1

c-plane sapphire

sapphire
Type Single Compound
Formula Al2O3
Role substrate
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role buffer layer
3

gallium nitride

Type
Formula GaN
Role
4

Al0.2Ga0.8N film

AlGaN layer
Type
Formula
Role
5

insulator layer

Type Complex Compound
Formula
Role gate insulator
6

Ti/Al/Pt/Au multilayer electrode material

Type Nano Material
Formula
Role source
7

Ti/Al/Pt/Au multilayer electrode material

Type Nano Material
Formula
Role drain
8

[3-(2,3-epoxypropoxy)-propyl]-trimethoxysilane moiety

3-(2,3-epoxypropoxy)propyltrimethoxysilane moiety γ-(2,3-epoxypropoxy)propyltrimethoxysilane moiety (3-glycidyloxypropyl)trimethoxysilane moiety (3-glycidoxypropyl)trimethoxysilane moiety 3-glycidyloxypropyltrimethoxysilane moiety 3-glycidoxypropyltrimethoxy-silane moiety 3-glycidoxypropyltrimethoxylsilane moiety 3-glycidoxypropyltrimethoxysilane moiety 3-glycidoxypropyltriethoxysilane moiety 3-glycidoxypropylsilanetrioxy group 3-glycidoxypropyltrimethoxysilane glycidoxypropylsiloxy group 3-GPS moiety A-187 moiety GLYMO moiety GOPTS moiety GPTMS moiety KH560 moiety GPTS moiety GPS moiety
Type
Formula -C6H11O5Si-
Role
9

glucose oxidase

GOx
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Sensor properties

Type of sensor Sensor property Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium nitride
  • c-plane sapphire
Product

gate-recessed AlGaN/GaN ion-sensitive field-effect-transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial