Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Pd/GaOx/GaN-based Schottky diode

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

aluminium gallium nitride

Type Single Compound
Formula Al0.23Ga0.78N
Role active layer
4

gallium nitride

Type
Formula GaN
Role
5

gallium oxide

GaOx
Type Single Compound
Formula GaO(x)
Role dielectric layer
6

palladium film

Pd film
Type Nano Material
Formula
Role Schottky gate
7

titanium/aluminium/titanium/gold multilayer

Ti/Al/Ti/Au multilayer
Type Nano Material
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
activation energy for hydrogen adsorption

12 more entries available to subscribers only.

Or, view sample content

Sensor properties

Type of sensor Sensor property Source
compounds sensor for hydrogen in air

0 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
sensors (excluding biosensors)

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. IpPvETA34g3MvkqTtL0FcTHql6ubLRCEkXWQfKsa
Product

Pd/GaOx/GaN-based Schottky diode

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial