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Pd/GaOx/GaN-based Schottky diode

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

aluminium gallium nitride

Type Single Compound
Formula Al0.23Ga0.78N
Role active layer
4

gallium nitride

Type
Formula GaN
Role
5

gallium oxide

GaOx
Type Single Compound
Formula GaO(x)
Role dielectric layer
6

palladium film

Pd film
Type Nano Material
Formula
Role Schottky gate
7

titanium/aluminium/titanium/gold multilayer

Ti/Al/Ti/Au multilayer
Type Nano Material
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for hydrogen adsorption

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for hydrogen in air

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. YiEhZeNs2x6SbBjoLaBaTlbkrF00AEQrdrO7sHob
Product

Pd/GaOx/GaN-based Schottky diode

Size: not specified

Medium/Support: none

References

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