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ultraviolet light-emitting-diode

Based on

1 Articles
2014 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role substrate
2

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role epitaxial layer
3

InGaN/InAlGaN multiple quantum well

InGaN/InAlGaN MQW
Type Nano Material
Formula
Role active layer
4

Mg-doped Al0.3Ga0.7N

Type Complex Compound
Formula
Role hole transport layer
5

Mg-doped Al0.1Ga0.9N

Type Complex Compound
Formula
Role hole transport layer
6

p-doped gallium nitride

p-GaN
Type
Formula
Role
7

p-doped indium gallium nitride

p-InGaN
Type Complex Compound
Formula
Role contacting layer
8

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent contact layer
9

chromium

Type
Formula Cr
Role
10

platinum

Type
Formula Pt
Role
11

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
coherent X-ray diffraction imaging

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • ammonia
  • trimethanidogallium
  1. SgYUkb
Product

ultraviolet light-emitting-diode

Size: not specified

Medium/Support: none

References

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