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n-GaAs/n+-Al0.35Ga0.65As/i-GaAs/InAs-QD/i-GaAs/n+-GaAs/GaAs(SI) multilayer heterostructure grown by ion beam crystallization

Based on

1 Articles
2015 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
2

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
4

InAs film

Type
Formula
Role
5

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
6

InAs film

Type
Formula
Role
7

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
8

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
9

aluminium-doped gallium arsenide

aluminium gallium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.35Ga0.65As n+-AlGaAs
Type Single Compound
Formula Ga0.65Al0.35As
Role conducting layer
10

gallium arsenide

Type
Formula GaAs
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dark current dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. eN1Gy
  2. UlU0ZncwIEE9MMn9AEEhtbKulFxLC9
  3. sz0WC3mZ7uumD8oTJtNCpOH0nSirt04T48l94Or2e5bZq6AyKOMr
  4. yUG20760HpUcQXRjZs
Product

n-GaAs/n+-Al0.35Ga0.65As/i-GaAs/InAs-QD/i-GaAs/n+-GaAs/GaAs(SI) multilayer heterostructure grown by ion beam crystallization

Size: not specified

Medium/Support: none

References

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