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n-GaAs/n+-Al0.35Ga0.65As/i-GaAs/InAs-QD/i-GaAs/n+-GaAs/GaAs(SI) multilayer heterostructure grown by ion beam crystallization

Based on

1 Articles
2015 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
2

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
4

InAs film

Type
Formula
Role
5

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
6

InAs film

Type
Formula
Role
7

gallium arsenide

Type Single Compound
Formula GaAs
Role barrier layer
8

gallium arsenide

Type Single Compound
Formula GaAs
Role buffer layer
9

aluminium-doped gallium arsenide

aluminium gallium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.35Ga0.65As n+-AlGaAs
Type Single Compound
Formula Al0.35Ga0.65As
Role conducting layer
10

gallium arsenide

Type
Formula GaAs
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. o9Uhl
  2. XvcQPgeuOaLVqEnwXfPfsXf18fDBxz
  3. kMpBH7HTlDtYt3YkZSk7vu0aNknBMb19CfJ6Rnxh9z09L22A4gIp
  4. SKfchlC2QVMnliaFey
Product

n-GaAs/n+-Al0.35Ga0.65As/i-GaAs/InAs-QD/i-GaAs/n+-GaAs/GaAs(SI) multilayer heterostructure grown by ion beam crystallization

References

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