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Yb/p-InP Schottky barrier diode

Based on

1 Articles
2015 Most recent source

Composition

1

Yb film

Type Nano Material
Formula
Role Schottky gate
2

zinc-doped p-type InP wafer

Type Complex Compound
Formula
Role substrate
3

platinum film

Pt layer Pt film
Type Nano Material
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
power generation

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Characterization

Method Source
atomic emission spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • zinc-doped p-type InP wafer
  1. T2PBb6a1gAcilnEuelwh84j7oAo
  2. fhuDgXTtYWtM3d5YMx0NtSGhPm
  3. 1tBF9
Product

Yb/p-InP Schottky barrier diode

Method 2

Type: Physical formation
Source:
Starting materials
  • zinc-doped p-type InP wafer
  1. Tf1OH7YWJVabIAc5wl44R5fAkis
  2. 9MWrjinTNJKL032BRlWgdXVP3J
  3. FhZ7U
Product

Yb/p-InP Schottky barrier diode

References

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