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Yb/p-InP Schottky barrier diode

Based on

1 Articles
2015 Most recent source

Composition

1

Yb film

Type Nano Material
Formula
Role Schottky gate
2

zinc-doped p-type InP wafer

Type Complex Compound
Formula
Role substrate
3

platinum film

Pt layer Pt film
Type Nano Material
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
power generation

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Characterization

Method Nanomaterial Variant Source
atomic emission spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • zinc-doped p-type InP wafer
  1. xr1eZ2YSAKWqmGd22jfCFkdgZzm
  2. ljEcEs42F2WNGizeekMDgYg60x
  3. aEy3e
Product

Yb/p-InP Schottky barrier diode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • zinc-doped p-type InP wafer
  1. CKQdAFmDcbUPr8MBr0s1og3cZcf
  2. XtN7XCYedvqV9za2OP4wEsimgF
  3. FmKKC
Product

Yb/p-InP Schottky barrier diode

Size: not specified

Medium/Support: none

References

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