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resistive random access memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

platinum

Type
Formula Pt
Role
5

TiOy/TiOx

Type Complex Compound
Formula
Role tunnel barrier layer
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role switching layer
7

titanium

Type Single Compound
Formula Ti
Role oxygen reservoir layer
8

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role isolation layer

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
data storage

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Characterization

Method Source
X-ray photoelectron spectroscopy dependent on oxidation time

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Biological effects

Preparation

References

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