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field-effect transistor with channels covered with h-BN flake

Based on

1 Articles
2015 Most recent source

Composition

1

heavy doped silicon

Type Complex Compound
Formula
Role back-gate substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

graphene/hexagonal boron nitride hybrid structure

graphene-based vertical hybrid structure graphene vertical hybrid structure graphene/h-BN hybrid structure
Type Nano Material
Formula
Role active layer
4

gold

Type Single Compound
Formula Au
Role source
5

chromium

Type Single Compound
Formula Cr
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • heavy doped silicon
Product

field-effect transistor with channels covered with h-BN flake

Size: not specified

Medium/Support: none

References

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