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SnO2-SiO2-Fe-Si nanolayer sandwich device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

stannic oxide

tin(IV) oxide tin dioxide tin oxide
Type Single Compound
Formula SnO2
Role semiconductor layer
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
4

iron

Type
Formula Fe
Role
5

silicon

Type Single Compound
Formula Si
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Source
g-factor difference between tin oxide and iron-silicon nanostructures

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Applications

Area Application Source
electronics

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Characterization

Method Source
electron paramagnetic resonance spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
  • stannic oxide
Product

SnO2-SiO2-Fe-Si nanolayer sandwich device

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon
  • stannic oxide
Product

SnO2-SiO2-Fe-Si nanolayer sandwich device

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon
  • stannic oxide
Product

SnO2-SiO2-Fe-Si nanolayer sandwich device

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon
  • stannic oxide
Product

SnO2-SiO2-Fe-Si nanolayer sandwich device

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon
  • stannic oxide
Product

SnO2-SiO2-Fe-Si nanolayer sandwich device

References

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