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W/TiOx/TaOx/W-structured resistive switching memory stack

Based on

1 Articles
2014 Most recent source

Composition

1

tungsten

Type Single Compound
Formula W
Role top electrode
2

titanium oxide

TiOx
Type Complex Compound
Formula
Role insulators
3

tantalum oxide

TaOx
Type Complex Compound
Formula
Role insulators
4

tungsten

Type Single Compound
Formula W
Role bottom electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cumulative probability

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tungsten
  • tantalum pentoxide
Product

W/TiOx/TaOx/W-structured resistive switching memory stack

Size: not specified

Medium/Support: none

References

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