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Ru/Lu2O3/ITO memory device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

indium tin oxide-coated polyethylene terephthalate

ITO-coated PET
Type
Formula
Role
3

Lu2O3 thin film

Type
Formula
Role
4

ruthenium

Type
Formula Ru
Role

Properties

General physical and chemical properties

Property Value Source
Arrhenius plot for current conduction

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • indium tin oxide-coated polyethylene terephthalate
  • silicon
  • lutetium
  1. 6AkjXE5ZpPYgJvP9NkR
Product

Ru/Lu2O3/ITO memory device

References

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