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HfO2/La2O3 stack-based metal-oxide-semiconductor capacitor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

hafnium oxide/lanthanum oxide thin film

HfO2/La2O3 thin film HfO2/La2O3 nanofilm
Type Nano Material
Formula
Role gate dielectrics
3

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-type silicon
  • lanthanum(III) oxide
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Product

HfO2/La2O3 stack-based metal-oxide-semiconductor capacitor

Size: not specified

Medium/Support: none

References

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