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graphene-based ballistic rectifier without antidote scatterer at center

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single layer graphene

monolayer graphene one layer graphene graphene
Type Nano Material
Formula
Role source
4

single layer graphene

monolayer graphene one layer graphene graphene
Type Nano Material
Formula
Role drain
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
device impedance

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Applications

Area Application Nanomaterial Variant Source
electronic paper

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • p-doped silicon
Product

graphene-based ballistic rectifier without antidote scatterer at center

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • p-doped silicon
Product

graphene-based ballistic rectifier without antidote scatterer at center

Size: not specified

Medium/Support: none

References

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